BSS138W-7 Diodes Inc, BSS138W-7 Datasheet - Page 3

• Manufacturer Part Number: BSS138W-7
• Description: MOSFET N-CH 50V 200MA SC70-3
• Manufacturer: Diodes Inc

Specifications of BSS138W-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BSS138W; BSS138WDITR

BSS138W
Document number: DS30206 Rev. 10 - 2
2.25
2.05
1.85
1.65
2.45
1.45
1.25
1.05
0.85
0.65
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
0.6
0.5
0.4
0.3
0.2
0.1
0
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
-55
8
5
4
3
2
0
7
6
1
0
Fig. 5 Drain-Source On Resistance vs. Drain Current
0
T = 25 C
j
1
0.02 0.04 0.06 0.08
V
GS
°
V , DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
DS
= 2.5V
j
2
-5
I , DRAIN CURRENT (A)
D
3
4
45
5
6
0.1
V
I = 0.5A
V
I = 0.075A
GS
D
D
GS
= 10V
7
= 4.5V
0.12
95
8
150 C
0.14
-55 C °
°
25 C
9
°
145
10
0.16
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1.8
1.6
1.2
0.6
1.4
0.8
0.4
0.2
0.7
0.6
0.5
0.4
0.3
0.2
0.8
0.1
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
-55
2
0
1
0
4
6
5
3
2
1
0
9
8
7
Fig. 6 Drain-Source On Resistance vs. Drain Current
0
0
V
-25
0.5
DS
V
GS
T , JUNCTION TEMPERATURE (°C)
= 1V
V
j
0.05
GS
= 2.75V
Fig. 2 Transfer Characteristics
1
, GATE-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
5
D
1.5
0.1
35
2
65
2.5
0.15
95
I = 1.0mA
3
D
150 C °
3.5
0.2
25 C °
125
BSS138W
-55 C °
© Diodes Incorporated
-55 C °
150 C °
4
25 C °
January 2011
155
4.5
0.25