ZVN2120A Diodes Zetex, ZVN2120A Datasheet
ZVN2120A
Manufacturer Part Number
ZVN2120A
Description
MOSFET N-CHAN 200V TO92-3
Manufacturer
Diodes Zetex
Datasheet
1.ZVN2120A.pdf
(3 pages)
Specifications of ZVN2120A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 250mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
180mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
85pF @ 25V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVN2120A
Manufacturer:
ZETEX
Quantity:
1 760
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
200 Volt V
R
DS(on)
= 10
DS
Obsolete. Alternative is ZVN0124A.
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
=25°C
DSS
200
1
500
100
3-368
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX.
3
20
10
100
10
85
20
7
8
8
20
12
stg
UNIT CONDITIONS.
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
T=125°C
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
-55 to +150
= 20V, V
=200V, V
=160V, V
=25V, V
=10V,I
=25V,I
=25 V, V
VALUE
25V, I
200
180
700
ZVN2120A
2
20
(2)
TO92 Compatible
D
D
GS
DS
=250mA
=250mA
GS
D
D
GS
GS
GS
=0V
=250mA
G
= V
DS
=10V
S
=0V, f=1MHz
E-Line
=0
=0V,
=0V
GS
UNIT
mW
mA
°C
A
V
V
(
3
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ZVN2120A Summary of contents
Page 1
... V GS(th GSS DSS 100 A I 500 mA D(on DS(on) g 100 iss oss rss d(on d(off 3-368 ZVN2120A E-Line TO92 Compatible VALUE UNIT 200 V 180 700 mW -55 to +150 °C I =1mA ID=1mA 20V =200V =160V, V =0V T=125°C (2) V =25V, V =10V =10V,I =250mA ...
Page 2
... I D= 1.0A 0.6 0.4 0.2 0.5A 0. Transfer Characteristics 2.4 2.2 2.0 1.8 1 1.4 1.0A 1.2 0.5A 0.1A 1.0 0.8 0.6 -40 -20 20 Normalised R 3-369 ZVN2120A 10V Gate Source Voltage (Volts) GS- V 10V GS= I 250mA GS 1mA 100 120 140 160 180 T -Junction Temperature (° ...
Page 3
... ZVN2120A TYPICAL CHARACTERISTICS 500 400 300 V 25V DS= 200 100 0 0 0.2 0.6 0.8 1.0 1.2 0 Drain Current (Amps) D(on) Transconductance v drain current 100 -Drain Source Voltage (Volts) DS Capacitance v drain-source voltage 500 400 300 200 100 0 1.6 1.8 2.0 1.4 0 Transconductance v gate-source voltage ...