ZVN3310ASTOA Diodes Zetex, ZVN3310ASTOA Datasheet
ZVN3310ASTOA
Manufacturer Part Number
ZVN3310ASTOA
Description
MOSFET N-CHAN 100V TO92-3
Manufacturer
Diodes Zetex
Datasheet
1.ZVN3310A.pdf
(3 pages)
Specifications of ZVN3310ASTOA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
2.4V @ 1mA
Input Capacitance (ciss) @ Vds
40pF @ 25V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
PARAMETER
Drain-Source Voltage
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Body Leakage
On-State Drain Current(1)
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
Gate-Source Threshold
Voltage
Zero Gate Voltage Drain
Current
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2
)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
100 Volt V
R
DS(on)
= 10
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
=25°C
fs
GS(th)
DS(on)
iss
oss
rss
DSS
100
0.8
500
100
3-378
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
= 25°C unless otherwise stated).
:T
MAX. UNIT CONDITIONS.
2.4
20
1
50
10
40
15
5
5
7
6
7
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
-55 to +150
=100V, V
=80V, V
=25V, V
=25V,I
=25V, V
= 20V, V
=10V,I
VALUE
25V, I
100
200
625
ZVN3310A
2
20
TO92 Compatible
D
D
GS
DS
=500mA
=500mA
GS
GS
GS
D
D
G
=0V
GS
=500mA
= V
DS
=0V, T=125°C
=10V
=0V, f=1MHz
S
E-Line
=0
=0V
GS
UNIT
mW
mA
°C
V
A
V
(2)
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ZVN3310ASTOA Summary of contents
Page 1
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt DS(on) ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate-Source Voltage Power Dissipation ...
Page 2
TYPICAL CHARACTERISTICS 1.4 1.2 1.0 0.8 0.6 0.4 0 Drain Source Voltage (Volts) DS Output Characteristics Gate Source Voltage (Volts) GS- Voltage ...
Page 3
ZVN3310A TYPICAL CHARACTERISTICS 160 120 0.2 0.4 0.6 0 Drain Current (Amps) D Transconductance v drain current -Drain Source Voltage (Volts) DS Capacitance ...