ZVNL120ASTZ Diodes Zetex, ZVNL120ASTZ Datasheet
ZVNL120ASTZ
Manufacturer Part Number
ZVNL120ASTZ
Description
MOSFET N-CHAN 200V TO92-3
Manufacturer
Diodes Zetex
Datasheet
1.ZVNL120A.pdf
(3 pages)
Specifications of ZVNL120ASTZ
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 250mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
180mA
Vgs(th) (max) @ Id
1.5V @ 1mA
Input Capacitance (ciss) @ Vds
85pF @ 25V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
*
APPLICATIONS
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
200 Volt V
R
Low threshold
Telephone handsets
DS(on)
=10
DS
amb
=25°C
amb
BV
C
t
SYMBOL MIN. MAX. UNIT CONDITIONS.
V
I
I
I
R
g
C
C
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
200
0.5
500
200
3-401
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
1.5
100
10
100
10
10
85
20
7
8
8
20
12
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=200 V, V
=160 V, V
=25 V, V
=25V,I
=25 V, V
-55 to +150
= 20V, V
=5V,I
=3V, I
25V, I
VALUE
200
180
700
ZVNL120A
2
20
D
D
=250mA
D
TO92 Compatible
GS
=125mA
DS
=250mA
D
GS
GS
=0V
=250mA
D
= V
DS
GS
GS
G
=5V
=0V, f=1MHz
S
=0V
=0
=0V, T=125°C
E-Line
GS
UNIT
mW
mA
°C
A
V
V
(2)
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ZVNL120ASTZ Summary of contents
Page 1
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 200 Volt =10 DS(on) * Low threshold APPLICATIONS * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed ...
Page 2
ZVNL120A TYPICAL CHARACTERISTICS 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 Drain Source Voltage (Volts) DS Output Characteristics 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 ...
Page 3
TYPICAL CHARACTERISTICS 700mA 0.4 0.8 1.2 1.6 0 Q-Charge (nC) Gate charge v gate-source voltage 100 -Gate Source Voltage (Volts) GS On-resistance vs gate-source voltage ...