ZVN2106ASTZ Diodes Zetex, ZVN2106ASTZ Datasheet - Page 2

• Manufacturer Part Number: ZVN2106ASTZ
• Description: MOSFET N-CHAN 60V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN2106ASTZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 450mA
• Vgs(th) (max) @ Id: 2.4V @ 1mA
• Input Capacitance (ciss) @ Vds: 75pF @ 18V
• Power - Max: 700mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Normalised R
ZVN2106A
0
4
3
2
1
4
3
2
1
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
0
-80 -60
Saturation Characteristics
1
V
DS
Transfer Characteristics
-40 -20
1
V
2
- Drain Source Voltage (Volts)
GS-
DS(on)
T
Gate Source Voltage (Volts)
j
-Junction Temperature (C°)
3
0 20 40 60 80
2
4
and V
TYPICAL CHARACTERISTICS
5
GS(th)
3
6
7
vs Temperature
100
4
8
120
V
I
D=
V
I
GS=
D=
GS=
9
1A
1mA
140 160
10V
V
DS
10
5
V
10V
6V
5V
4V
9V
8V
V
10V
7V
3V
GS=
DS=
3-362
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.8
1.2
0
1.6
2.0
1.4
1.0
0.8
0.6
0.1
0.4
0.2
10
0
1
On-resistance v gate-source voltage
0
Voltage Saturation Characteristics
1
0
Transconductance v drain current
V
V
GS-
GS
1
2
-Gate Source Voltage (Volts)
Gate Source Voltage (Volts)
2
I
D
- Drain Current (Amps)
3
2
4
4
V
DS=
5 6 7 8 9 10
10V
3
6
4
8
5
10
20
I
1A
0.5A
0.25A
0.25A
0.5A
D=
I
1A
D=