ZVN2110ASTZ Diodes Zetex, ZVN2110ASTZ Datasheet
ZVN2110ASTZ
Manufacturer Part Number
ZVN2110ASTZ
Description
MOSFET N-CHAN 100V TO92-3
Manufacturer
Diodes Zetex
Datasheet
1.ZVN2110A.pdf
(3 pages)
Specifications of ZVN2110ASTZ
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
320mA
Vgs(th) (max) @ Id
2.4V @ 1mA
Input Capacitance (ciss) @ Vds
75pF @ 25V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVN2110ASTZ
Manufacturer:
ZETEX
Quantity:
2 000
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test
(3) Switching times measured with 50
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
100 Volt V
R
DS(on)
= 4
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
=25°C
DSS
source impedance and <5ns rise time on a pulse generator
100
0.8
1.5
250
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX.
2.4
20
100
4
75
25
8
7
8
13
13
stg
1
UNIT CONDITIONS.
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
-55 to +150
=100V, V
=80V, V
=25V, V
=25V,I
=25 V, V
= 20V, V
=10V,I
VALUE
25V, I
100
320
700
ZVN2110A
6
20
TO92 Compatible
D
D
GS
DS
=1A
D
=1A
GS
GS
D
GS
=1A
=0V
GS
G
= V
DS
=0V, T=125°C
=10V
S
=0V, f=1MHz
E-Line
=0
=0V
GS
UNIT
mW
mA
°C
A
V
V
(2)
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ZVN2110ASTZ Summary of contents
Page 1
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt DS(on) ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate Source Voltage Power ...
Page 2
TYPICAL CHARACTERISTICS V GS= 10V 2 1.2 6V 0 Drain Source Voltage (Volts) DS Output Characteristics ...
Page 3
ZVN2110A TYPICAL CHARACTERISTICS 500 400 300 V 25V DS= 200 100 0 0 0.2 0.4 0 Drain Current (Amps) D(on) Transconductance v drain current 100 -Drain Source Voltage (Volts) ...