ZVN0124ASTOB Diodes Zetex, ZVN0124ASTOB Datasheet
ZVN0124ASTOB
Manufacturer Part Number
ZVN0124ASTOB
Description
MOSFET N-CHAN 240V TO92-3
Manufacturer
Diodes Zetex
Datasheet
1.ZVN0124A.pdf
(3 pages)
Specifications of ZVN0124ASTOB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 Ohm @ 250mA, 10V
Drain To Source Voltage (vdss)
240V
Current - Continuous Drain (id) @ 25° C
160mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
85pF @ 25V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 94
FEATURES
*
*
APPLICATIONS
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
240 Volt V
R
Telephone handsets
DS(on)
=16
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
=25°C
DSS
240
1
500
100
3-350
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX.
3
20
10
100
16
85
20
7
7
8
16
8
stg
UNIT CONDITIONS.
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
T=125°C
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
-55 to +150
= 20V, V
=240 V, V
=192 V, V
=25 V, V
=10V,I
=25V,I
=25 V, V
VALUE
25V, I
240
160
700
ZVN0124A
2
20
(2)
TO92 Compatible
D
D
GS
DS
=250mA
=250mA
D
D
GS
GS
=0V
=250mA
G
= V
DS
GS
GS
S
=10V
=0V, f=1MHz
E-Line
=0V
=0
=0V,
GS
UNIT
mW
mA
°C
A
V
V
(
3
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ZVN0124ASTOB Summary of contents
Page 1
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 – MARCH 94 FEATURES * 240 Volt =16 DS(on) APPLICATIONS * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate ...
Page 2
TYPICAL CHARACTERISTICS 2.0 1.8 V 10V 1.6 GS= 8V 1.4 6V 1.2 5V 1.0 0.8 4V 0.6 0.4 0 Drain Source Voltage (Volts) V DS- Output Characteristics ...
Page 3
ZVN0124A TYPICAL CHARACTERISTICS 500 400 300 200 100 0 0 0.2 0.4 0.6 I -Drain Current (Amps) D(On) Transconductance v drain current -Drain-Source Voltage (Volts) DS Capacitance ...