ZVNL110ASTZ Diodes Zetex, ZVNL110ASTZ Datasheet

MOSFET N-CHAN 100V TO92-3

ZVNL110ASTZ

Manufacturer Part Number
ZVNL110ASTZ
Description
MOSFET N-CHAN 100V TO92-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZVNL110ASTZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
320mA
Vgs(th) (max) @ Id
1.5V @ 1mA
Input Capacitance (ciss) @ Vds
75pF @ 25V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
ZVNL110ASTB
ZVNL110ASTZ
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
PARAMETER
Drain-Source Voltage
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Body Leakage
On-State Drain Current(1)
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
Gate-Source Threshold
Voltage
Zero Gate Voltage Drain
Current
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
100 Volt V
R
Low threshold voltage
DS(on)
=3
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
=25°C
DSS
100
0.75
750
225
3-400
amb
V
SYMBOL
V
I
I
P
T
D
DM
tot
j
DS
GS
= 25°C unless otherwise stated).
:T
MAX. UNIT CONDITIONS.
1.5
100
10
500
4.5
3.0
75
25
8
7
12
15
13
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
(2)
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
-55 to +150
= 20V, V
=100 V, V
=80 V, V
=25 V, V
=5V,I
=10V, I
=25V,I
=25 V, V
VALUE
25V, V
100
320
700
ZVNL110A
6
20
D
TO92 Compatible
=250mA
D
GS
D
DS
=500mA
=500mA
GS
D
GS
GS
GS
=0V
G
= V
DS
GS
=10V, I
S
=0V, T=125°C
=5V
=0V, f=1MHz
E-Line
=0V
=0
GS
UNIT
D
mW
mA
°C
=1A
V
A
V

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