ZVP2106AS Diodes Zetex, ZVP2106AS Datasheet
ZVP2106AS
Manufacturer Part Number
ZVP2106AS
Description
MOSFET P-CHAN 60V TO92-3
Manufacturer
Diodes Zetex
Datasheet
1.ZVP2106A.pdf
(3 pages)
Specifications of ZVP2106AS
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
280mA
Vgs(th) (max) @ Id
3.5V @ 1mA
Input Capacitance (ciss) @ Vds
100pF @ 18V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVP2106ASTOA
Manufacturer:
DIODES/ZETEX
Quantity:
9 200
Company:
Part Number:
ZVP2106ASTOB
Manufacturer:
DIODES/ZETEX
Quantity:
9 200
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
60 Volt V
R
DS(on)
=5
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
=25°C
DSS
-60
-1.5
-1
150
3-417
amb
SYMBOL
V
I
I
V
P
T
D
DM
MAX. UNIT CONDITIONS.
-3.5
20
-0.5
-100
5
100
60
20
7
15
12
15
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
stg
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=-1mA, V
V
V
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=-1mA, V
=-60 V, V
=-48 V, V
=-18 V, V
=-18V,I
=-18V, V
= 20V, V
=-10V,I
-55 to +150
-18V, I
VALUE
-280
700
-60
-4
ZVP2106A
20
TO92 Compatible
D
D
GS
DS
=-500mA
=-500mA
GS
D
GS
GS
GS
DS
D
=0V
=-500mA
= V
G
=0V, f=1MHz
=0
=0V, T=125°C
=-10V
=0V
S
E-Line
GS
UNIT
mW
mA
°C
A
V
V
(2)
(
3
)
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ZVP2106AS Summary of contents
Page 1
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 60 Volt DS(on) ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate Source Voltage Power Dissipation ...
Page 2
ZVP2106A TYPICAL CHARACTERISTICS -3.5 V GS= -20V -3.0 -18V -14V -2.5 -12V -2.0 -10V -1.5 -9V -8V -1.0 -0 -10 -20 - Drain Source Voltage (Volts) DS Output Characteristics - ...
Page 3
TYPICAL CHARACTERISTICS 300 250 V -10V DS= 200 150 100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2 Drain Current (Amps) D Transconductance v drain current 100 ...