ZVP2110ASTZ Diodes Zetex, ZVP2110ASTZ Datasheet
ZVP2110ASTZ
Manufacturer Part Number
ZVP2110ASTZ
Description
MOSFET P-CHAN 100V TO92-3
Manufacturer
Diodes Zetex
Datasheet
1.ZVP2110A.pdf
(3 pages)
Specifications of ZVP2110ASTZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 Ohm @ 375mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
3.5V @ 1mA
Input Capacitance (ciss) @ Vds
100pF @ 25V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
100 Volt V
R
DS(on)
=8
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
=25°C
DSS
-100
-1.5
-750
125
3-421
amb
SYMBOL
V
I
I
V
P
T
D
DM
MAX. UNIT CONDITIONS.
-3.5
20
-1
-100
8
100
35
10
7
15
12
15
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=-1mA, V
V
V
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=-1mA, V
=-100 V, V
=-80 V, V
=-25 V, V
=-25V,I
=-25V, V
= 20V, V
=-10V,I
-55 to +150
-25V, I
VALUE
-100
-230
700
-3
ZVP2110A
20
TO92 Compatible
D
D
GS
DS
=-375mA
=-375mA
GS
D
GS
GS
DS
D
=0V
=-375mA
= V
GS
G
=0V, f=1MHz
=0V, T=125°C
=-10V
=0V
S
E-Line
=0
GS
UNIT
mW
mA
°C
A
V
V
(2)
(
3
)
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ZVP2110ASTZ Summary of contents
Page 1
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt DS(on) ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate Source Voltage Power Dissipation ...
Page 2
ZVP2110A TYPICAL CHARACTERISTICS V GS= -1.6 -20V -16V -1.4 -12V -1.2 -10V -9V -1.0 -8V -0.8 -7V -0.6 -6V -0.4 -0 -10 -20 - Drain Source Voltage (Volts) DS Output Characteristics - ...
Page 3
TYPICAL CHARACTERISTICS 250 V DS= 200 150 100 -0.2 -0.4 -0.6 -0.8 -1 Drain Current (Amps) D Transconductance v drain current -20 -40 -60 V -Drain Source Voltage (Volts) ...