ZXMN10A08DN8TC Diodes Zetex, ZXMN10A08DN8TC Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single ZXMN10A08DN8TC
Manufacturer Part Number
ZXMN10A08DN8TC
Description
MOSFET N-CHAN 100V 8SOIC
Manufacturer
Diodes Zetex
Specifications of ZXMN10A08DN8TC
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 3.2A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
7.7nC @ 10V
Input Capacitance (ciss) @ Vds
405pF @ 50V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
ZXMN10A08DN8TC
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
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•
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APPLICATIONS
•
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ORDERING INFORMATION
DEVICE MARKING
•
ISSUE 4 - JANUARY 2005
DEVICE
ZXMN10A08DN8TA
ZXMN10A08DN8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
ZXMN
10A08D
= 100V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.25
WIDTH
12mm
12mm
TAPE
I
D
QUANTITY
2,500 units
PER REEL
500 units
= 2.1A
1
ZXMN10A08DN8
S E M I C O N D U C T O R S
PINOUT
Top View
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ZXMN10A08DN8TC Summary of contents
... converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN10A08DN8TA 7” 12mm ZXMN10A08DN8TC 13” 12mm DEVICE MARKING • ZXMN 10A08D ISSUE 4 - JANUARY 2005 ZXMN10A08DN8 I = 2.1A D QUANTITY PER REEL 500 units 2,500 units ...
ZXMN10A08DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate source voltage Continuous drain current V =10V =10V =10V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) (a) ...
ISSUE 4 - JANUARY 2005 TYPICAL CHARACTERISTICS 3 ZXMN10A08DN8 ...
ZXMN10A08DN8 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1)(3) Forward transconductance (3) DYNAMIC Input capacitance Output capacitance Reverse transfer capacitance (2) (3) SWITCHING Turn-on delay time ...
ISSUE 4 - JANUARY 2005 TYPICAL CHARACTERISTICS 5 ZXMN10A08DN8 ...
ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 6 ...
PACKAGE OUTLINE CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 H 5.80 6.20 0.228 0.244 E 3.80 ...
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