IRFU9110PBF Vishay, IRFU9110PBF Datasheet - Page 2

• Manufacturer Part Number: IRFU9110PBF
• Description: MOSFET P-CH 100V 3.1A I-PAK
• Manufacturer: Vishay

Specifications of IRFU9110PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -3.1A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFU9110PBF

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
T
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
V
= 25 °C, I
T
R
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
= - 10 V
= - 10 V
g
Reference to 25 °C, I
= 25 °C, I
MIN.
= - 80 V, V
= 24 Ω, R
V
V
V
-
-
-
V
DD
V
DS
f = 1.0 MHz, see fig. 5
DS
TEST CONDITIONS
DS
GS
= - 50 V, I
F
= - 50 V, I
= - 100 V, V
= V
= 0 V, I
= - 4.0 A, dI/dt = 100 A/μs
V
V
V
GS
DS
S
I
D
D
GS
GS
= - 3.1 A, V
GS
= 11 Ω, see fig. 10
= - 25 V,
= - 4.0 A, V
= ± 20 V
, I
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
D
= 250 μA
I
= 250 μA
D
= - 4.0 A,
= - 1.9 A
GS
= - 1.9 A
D
TYP.
= 0 V
J
= 1 mA
GS
-
-
-
= 125 °C
DS
G
G
= 0 V
= - 80 V,
b
D
S
b
b
b
D
S
b
- 100
MIN.
- 2.0
0.97
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
5.0
50
S10-1135-Rev. C, 10-May-10
Document Number: 91279
- 0.093
TYP.
0.17
200
4.5
7.5
94
18
10
27
15
17
80
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
- 100
- 500
- 4.0
- 3.1
- 5.5
0.30
- 12
160
1.2
8.7
2.2
4.1
S
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns
Ω
S
A
V
V
V