ZVN4310ASTZ Diodes Zetex, ZVN4310ASTZ Datasheet
ZVN4310ASTZ
Manufacturer Part Number
ZVN4310ASTZ
Description
MOSFET N-CHAN 100V TO92-3
Manufacturer
Diodes Zetex
Datasheet
1.ZVN4310ASTOB.pdf
(3 pages)
Specifications of ZVN4310ASTZ
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
850mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
*
ABSOLUTE MAXIMUM RATINGS.
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
PARAMETER
Drain-Source Voltage
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Body Leakage
On-State Drain
Current(1)
Continuous Drain Current at T
Practical Continuous Drain Current at
T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Practical Power Dissipation at T
Operating and Storage Temperature Range
Gate-Source
Threshold Voltage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance
(1)
Forward
Transconductance
(1)(2)
amb
100 Volt V
R
Spice model available
DS(on)
=25°C
= 0.5
DS
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
GSS
DSS
D(on)
fs
GS(th)
DS(on)
=25°C
DSS
amb
amb
=25°C
100
1
9
600
=25°C*
TYP.
0.36
0.48
3-393
amb
SYMBOL
V
I
I
I
V
P
P
T
D
DP
DM
tot
totp
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX.
3
20
10
100
0.5
0.65
stg
UNIT CONDITIONS.
V
V
nA
A
mS
A
A
I
ID=1mA, V
V
V
V
V
V
V
V
D
GS
DS
DS
DS
GS
GS
DS
=1mA, V
-55 to +150
=100V, V
=80V, V
=25 V, V
=25V,I
= 20V, V
=10V,I
=5V, I
VALUE
1.13
100
850
0.9
12
ZVN4310A
1
20
TO92 Compatible
D
D
D
GS
=1.5A
DS
=3A
=3A
GS
D
GS
=0V
GS
G
= V
DS
=0V, T=125°C
S
=10V
E-Line
=0
=0V
GS
UNIT
mW
W
°C
A
A
A
V
V
(2)
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ZVN4310ASTZ Summary of contents
Page 1
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt 0.5 DS(on) * Spice model available ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Practical Continuous Drain ...
Page 2
ZVN4310A ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL MIN. Input Capacitance (2) C iss Common Source C oss Output Capacitance (2) Reverse Transfer C rss Capacitance (2) Turn-On Delay Time t d(on) (2)(3) Rise Time (2)( Turn-Off Delay Time ...
Page 3
TYPICAL CHARACTERISTICS V GS= 20V 10V 12V Drain Source Voltage (Volts) DS Saturation Characteristics 2.6 2.4 2.2 2.0 ...