IRFD120 Vishay, IRFD120 Datasheet
IRFD120
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IRFD121
IRFD122
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IRFD120 Summary of contents
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... W. HVMDIP IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120 = 25 °C, unless otherwise noted ° 100 ° °C A for 2.6 A (see fig. 12 175 ° IRFD120, SiHFD120 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 100 DS V ± 1 0. 0.0083 E 100 ...
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... IRFD120, SiHFD120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Output Characteristics, T Document Number: 91128 S10-2462-Rev. C, 08-Nov- ° ° 175 °C = 175 °C A IRFD120, SiHFD120 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...
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... IRFD120, SiHFD120 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° ° 175 ° 175 ° SINGLE PULSE SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91128 S10-2462-Rev. C, 08-Nov-10 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91128 S10-2462-Rev. C, 08-Nov- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Rectangular Pulse Duration (s) , Rectangular Pulse Duration ( IRFD120, SiHFD120 Vishay Siliconix D.U. d(on) r d(off) f www.vishay.com 5 ...
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... IRFD120, SiHFD120 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFD120, SiHFD120 Vishay Siliconix + + www.vishay.com 7 ...
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... E min. 0.100 [2.54] typ. E max. INCHES MAX. 0.330 0.425 0.290 Package Information Vishay Siliconix 0.197 [5.00] 0.189 [4.80] 0.180 [4.57] 0.160 [4.06] 0.160 [4.06] 0.140 [3.56] 0.024 [0.60 0.020 [0.51] MILLIMETERS MIN. MAX. 7.87 8 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...