IRFR9010 Vishay, IRFR9010 Datasheet
IRFR9010
Specifications of IRFR9010
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IRFR9010 Summary of contents
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... P-Channel MOSFET Power MOSFETs to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9010, SiHFR9010 is provided tape. The straight lead option IRFU9010, SiHFU9010 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat ...
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... IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink a Maximum Junction-to-Case (Drain) Note a. Mounting pad must cover heatsink surface area. SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Transfer Characteristics Fig Typical Saturation Characteristics Document Number: 91378 S10-1135-Rev. C, 10-May-10 IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Fig Typical Transconductance vs. Drain Current Fig Typical Source-Drain Diode Forward Voltage Vishay Siliconix Fig Maximum Safe Operating Area www.vishay.com ...
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... IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix Fig Breakdown Voltage vs. Temperature Fig Normalized On-Resistance vs. Temperature www.vishay.com 4 Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91378 S10-1135-Rev. C, 10-May-10 ...
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... Fig Typical On-Resistance vs. Drain Current Fig Maximum Drain Current vs. Case Temperature Document Number: 91378 S10-1135-Rev. C, 10-May-10 IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Fig. 13a - Maximum Avalanche vs. Starting Junction Vary t p required I Fig. 13b - Unclamped Inductive Test Circuit Fig. 13c - Unclamped Inductive Waveforms Vishay Siliconix ...
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... IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration t t d(on Fig. 15a - Switching Time Waveforms D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 15b - Switching Time Test Circuit www.vishay.com d(off Charge Fig. 16a - Basic Gate Charge Waveform Current regulator Same type as D ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91378. Document Number: 91378 S10-1135-Rev. C, 10-May-10 IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...
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