IRF610 Vishay, IRF610 Datasheet
IRF610
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IRF610 Summary of contents
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... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25 3.3 A (see fig. 12 150 °C. This datasheet is subject to change without notice. IRF610, SiHF610 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT V 200 ± 3 2 0.29 W/° ...
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... IRF610, SiHF610 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... Fig Typical Transfer Characteristics C 3.5 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 150 °C 0 91023_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF610, SiHF610 Vishay Siliconix 20 µs Pulse Width Gate-to-Source Voltage ( 3 100 120 140 160 T Junction Temperature (° ...
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... IRF610, SiHF610 Vishay Siliconix 300 MHz iss gs gd 250 rss oss ds gd 200 C iss 150 C oss 100 C 50 rss Drain-to-Source Voltage ( 91023_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 100 Total Gate Charge (nC) 91023_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms - 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF610, SiHF610 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
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... IRF610, SiHF610 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91023_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For N-Channel This datasheet is subject to change without notice. IRF610, SiHF610 Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...