IRL640SPBF Vishay, IRL640SPBF Datasheet

MOSFET N-CH 200V 17A D2PAK

IRL640SPBF

Manufacturer Part Number
IRL640SPBF
Description
MOSFET N-CH 200V 17A D2PAK
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRL640SPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 10A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 5V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.18 Ohm @ 5 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
17 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
17A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
180mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.18Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±10V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRL640SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRL640SPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 Material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91306
S10-2554-Rev. B, 08-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Temperature
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 17 A, dI/dt  150 A/μs, V
= 50 V, starting T
()
K
SMD-220
D
G
a
J
= 25 °C, L = 3.0 mH, R
S
c
a
a
b
DD
V
 V
GS
e
= 5 V
DS
G
, T
SMD-220
SiHL640S-GE3
IRL640SPbF
SiHL640S-E3
IRL640S
SiHL640S
J
N-Channel MOSFET
e
Single
 150 °C.
200
9.0
66
38
g
= 25 , I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.18
GS
AS
at 5.0 V
= 17 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• R
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SMD-220 is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
SMD-220 is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0 W in a typical surface mount application.
SMD-220
SiHL640STRL-GE3
IRL640STRLPbF
SiHL640STL-E3
IRL640STRL
SiHL640STL
Definition
DS(on)
Specified at V
power
SYMBOL
T
dV/dt
a
a
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
a
stg
a
capability
a
GS
design,
IRL640S, SiHL640S
= 4 V and 5 V
- 55 to + 150
and
LIMIT
SMD-220
SiHL640STRR-GE3
IRL640STRRPbF
SiHL640STR-E3
IRL640STRR
SiHL640STR
0.025
300
± 10
200
580
125
1.0
3.1
17
11
68
10
13
5.0
low
Vishay Siliconix
d
the
on-resistance
lowest
a
a
www.vishay.com
a
a
a
UNIT
W/°C
V/ns
possible
mJ
mJ
°C
W
V
A
A
and
1

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IRL640SPBF Summary of contents

Page 1

... The S SMD-220 is suitable for high current applications because N-Channel MOSFET of its low internal connection resistance and can dissipate typical surface mount application. SMD-220 SMD-220 SiHL640S-GE3 SiHL640STRL-GE3 IRL640SPbF IRL640STRLPbF SiHL640S-E3 SiHL640STL-E3 IRL640S IRL640STRL SiHL640S SiHL640STL = 25 °C, unless otherwise noted ° ...

Page 2

... IRL640S, SiHL640S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91306 S10-2554-Rev. B, 08-Nov- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRL640S, SiHL640S Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRL640S, SiHL640S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91306 S10-2554-Rev. B, 08-Nov-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91306 S10-2554-Rev. B, 08-Nov-10 IRL640S, SiHL640S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRL640S, SiHL640S Vishay Siliconix Vary t to obtain p required D.U. 0. Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91306. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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