IRFD9120 Vishay, IRFD9120 Datasheet

MOSFET P-CH 100V 1A 4-DIP

IRFD9120

Manufacturer Part Number
IRFD9120
Description
MOSFET P-CH 100V 1A 4-DIP
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of IRFD9120

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 600mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.6Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
1A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Package Type
HexDIP
Power Dissipation
1.3W
Transistor Polarity
P Channel
Continuous Drain Current Id
-1A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
600mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFD9120

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91139
S10-2464-Rev. D, 25-Oct-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 - 6.8 A, dI/dt  110 A/μs, V
= - 25 V, starting T
()
D
HVMDIP
a
S
G
J
= 25 °C, L = 52 mH, R
c
a
a
b
V
GS
DD
= - 10 V
 V
G
DS
P-Channel MOSFET
, T
Single
- 100
J
3.0
9.0
18
 175 °C.
g
A
= 25 , I
S
D
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.60
GS
at - 10 V
AS
= - 2.0 A (see fig. 12).
T
for 10 s
A
= 25 °C
T
T
A
A
HVMDIP
IRFD9120PbF
SiHFD9120-E3
IRFD9120
SiHFD9120
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
IRFD9120, SiHFD9120
design,
- 55 to + 175
0.0083
LIMIT
- 0.70
- 100
300
± 20
- 1.0
- 8.0
- 1.0
0.13
- 5.5
140
1.3
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFD9120 Summary of contents

Page 1

... W. HVMDIP IRFD9120PbF SiHFD9120-E3 IRFD9120 SiHFD9120 = 25 °C, unless otherwise noted ° 100 ° °C A for  2.0 A (see fig. 12  175 ° IRFD9120, SiHFD9120 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V - 100 DS V ± 1 0. 8.0 DM 0.0083 E 140 1 ...

Page 2

... IRFD9120, SiHFD9120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Output Characteristics, T Document Number: 91139 S10-2464-Rev. D, 25-Oct- ° ° 175 °C = 175 °C A IRFD9120, SiHFD9120 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFD9120, SiHFD9120 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 175 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91139 S10-2464-Rev. D, 25-Oct-10 ...

Page 5

... T , Ambient Temperature (°C) A Fig Maximum Drain Current vs. Ambient Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91139 S10-2464-Rev. D, 25-Oct-10 IRFD9120, SiHFD9120 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFD9120, SiHFD9120 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices Fig For P-Channel IRFD9120, SiHFD9120 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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