IRFR9214 Vishay, IRFR9214 Datasheet - Page 3

• Manufacturer Part Number: IRFR9214
• Description: MOSFET P-CH 250V 2.7A DPAK
• Manufacturer: Vishay

Specifications of IRFR9214

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 220pf @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR9214

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91282
S-82992-Rev. B, 12-Jan-09
0.1
0.1
10
10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
1
1
0.1
0.1
TOP
BOTTOM
TOP
BOTTOM
-V
-V
DS
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
1
20μs PULSE WIDTH
T = 150 C
20μs PULSE WIDTH
T = 25 C
J
J
10
10
-4.5V
-4.5V
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
°
°
C
C
= 150 °C
= 25 °C
100
100
0.1
Fig. 4 - Normalized On-Resistance vs. Temperature
10
2.5
2.0
1.5
1.0
0.5
0.0
1
4
-60 -40 -20
I =
Fig. 3 - Typical Transfer Characteristics
D
T = 25 C
-V
J
-2.7A
5
GS
T , Junction Temperature ( C)
J
, Gate-to-Source Voltage (V)
°
0
6
20 40
7
60 80 100 120 140 160
Vishay Siliconix
V
20μs PULSE WIDTH
T = 150 C
DS
J
8
= -50V
°
V
°
www.vishay.com
GS
9
=
-10V
10
3