IRFIB6N60APBF Vishay, IRFIB6N60APBF Datasheet

MOSFET N-CH 600V 5.5A TO220FP

IRFIB6N60APBF

Manufacturer Part Number
IRFIB6N60APBF
Description
MOSFET N-CH 600V 5.5A TO220FP
Manufacturer
Vishay
Series
HEXFET®r
Datasheets

Specifications of IRFIB6N60APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 3.3A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.75 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.5 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
5.5A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
750mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFIB6N60APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFIB6N60APBF
Quantity:
7 150
Company:
Part Number:
IRFIB6N60APBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91175
S09-0516-Rev. C, 13-Apr-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
(Max.) (nC)
(nC)
(nC)
(V)
≤ 9.2 A, dI/dt ≤ 50 A/µs, V
(Ω)
J
= 25 °C, L = 6.8 mH, R
a
G
D
c
a
a
S
DD
b
V
≤ V
GS
G
= 10 V
DS
= 25 Ω, I
, T
G
J
N-Channel MOSFET
Single
≤ 150 °C.
600
49
13
20
AS
= 9.2 A (see fig. 12).
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.75
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFIB6N60APbF
SiHFIB6N60A-E3
IRFIB6N60A
SiHFIB6N60A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• High Voltage Isolation = 2.5 kV
TYPICAL SMPS TOPOLOGIES
• Single Transistor Forward
• Active Clamped Forward
Requirement
Ruggedness
Avalanche Voltage and Current
IRFIB6N60A, SiHFIB6N60A
Characterized
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
g
Results in Simple Drive
Capacitance
- 55 to + 150
LIMIT
300
± 30
0.48
600
290
5.5
3.5
9.2
6.0
5.0
1.1
RMS
37
60
10
Vishay Siliconix
d
(t = 60 s, f = 60 Hz)
and
www.vishay.com
lbf · in
RoHS*
COMPLIANT
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
W
V
A
Available
1

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IRFIB6N60APBF Summary of contents

Page 1

... Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • High Voltage Isolation = 2.5 kV TYPICAL SMPS TOPOLOGIES S • Single Transistor Forward N-Channel MOSFET • Active Clamped Forward TO-220 FULLPAK IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A = 25 °C, unless otherwise noted ° ...

Page 2

... IRFIB6N60A, SiHFIB6N60A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... Fig Normalized On-Resistance vs. Temperature Vishay Siliconix T = 150 C ° J ° 50V DS 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9 Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics ...

Page 4

... IRFIB6N60A, SiHFIB6N60A Vishay Siliconix 2400 1MHz iss rss gd 2000 oss ds gd iss 1600 oss 1200 800 rss 400 Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 9. FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... V 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91175 S09-0516-Rev. C, 13-Apr-09 IRFIB6N60A, SiHFIB6N60A 125 150 ° 0.001 0. Rectangular Pulse Duration ( Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 600 TOP 500 BOTTOM 400 300 200 100 100 Starting T , Junction Temperature ( 4.1A 5.8A 9.2A 125 150 ° Current regulator Same type as D.U.T. ...

Page 7

... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91175. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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