IRFIB6N60APBF Vishay, IRFIB6N60APBF Datasheet
IRFIB6N60APBF
Specifications of IRFIB6N60APBF
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IRFIB6N60APBF Summary of contents
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... Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • High Voltage Isolation = 2.5 kV TYPICAL SMPS TOPOLOGIES S • Single Transistor Forward N-Channel MOSFET • Active Clamped Forward TO-220 FULLPAK IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A = 25 °C, unless otherwise noted ° ...
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... IRFIB6N60A, SiHFIB6N60A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...
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... Fig Normalized On-Resistance vs. Temperature Vishay Siliconix T = 150 C ° J ° 50V DS 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9 Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics ...
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... IRFIB6N60A, SiHFIB6N60A Vishay Siliconix 2400 1MHz iss rss gd 2000 oss ds gd iss 1600 oss 1200 800 rss 400 Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 9. FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
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... V 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91175 S09-0516-Rev. C, 13-Apr-09 IRFIB6N60A, SiHFIB6N60A 125 150 ° 0.001 0. Rectangular Pulse Duration ( Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 600 TOP 500 BOTTOM 400 300 200 100 100 Starting T , Junction Temperature ( 4.1A 5.8A 9.2A 125 150 ° Current regulator Same type as D.U.T. ...
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... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91175. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...