IRFL9014TR Vishay, IRFL9014TR Datasheet
IRFL9014TR
Specifications of IRFL9014TR
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IRFL9014TR Summary of contents
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... W is possible in a typical surface mount application. SOT-223 IRFL9014PbF SiHFL9014-E3 IRFL9014 SiHFL9014 = 25 °C, unless otherwise noted ° 100 °C C IRFL9014, SiHFL9014 Vishay Siliconix device design, low on-resistance SOT-223 a IRFL9014TRPbF a SiHFL9014T-E3 a IRFL9014TR a SiHFL9014T SYMBOL LIMIT ± 1 1 0.025 0.017 E 140 1 0.31 AR www.vishay.com ...
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... IRFL9014, SiHFL9014 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). ...
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... A, dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated 4 µs Pulse Width ° 91195_03 = 25 ° µs Pulse Width T = 150 ° 91195_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFL9014, SiHFL9014 Vishay Siliconix MIN. TYP. MAX 1 5 160 b - 0.096 0.19 and ° ° ...
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... IRFL9014, SiHFL9014 Vishay Siliconix 600 MHz iss 500 rss oss 400 300 200 100 Drain-to-Source Voltage ( 91195_05 Fig Typical Capacitance vs. Drain-to-Source Voltage -6 - Total Gate Charge (nC) 91195_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 10 91195_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91195 S-81412-Rev. A, 07-Jul-08 100 125 150 Single Pulse (Thermal Response 0 Rectangular Pulse Duration (s) 1 IRFL9014, SiHFL9014 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRFL9014, SiHFL9014 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 400 300 200 100 100 Starting T , Junction Temperature (°C) 91195_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
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... V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91195. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...