IRFBC40SPBF Vishay, IRFBC40SPBF Datasheet

MOSFET N-CH 600V 6.2A D2PAK

IRFBC40SPBF

Manufacturer Part Number
IRFBC40SPBF
Description
MOSFET N-CH 600V 6.2A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFBC40SPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3.7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
6.2A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.2 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBC40SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBC40SPBF
Quantity:
300
Company:
Part Number:
IRFBC40SPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRFBC40, SiHFBC40 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91116
S10-2433-Rev. B, 25-Oct-10
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
2
PAK
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 6.2 A, dI/dt  80 A/μs, V
= 50 V; starting T
(TO-262)
()
G
D
S
G
a,e
e
e
D
J
D
2
= 25 °C, L = 27 mH, R
PAK (TO-263)
S
c, e
a
a
DD
b, e
V
 V
GS
D
SiHFBC40S-GE3
IRFBC40SPbF
SiHFBC40S-E3
IRFBC40S
SiHFBC40S
= 10 V
DS
2
PAK (TO-263)
, T
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
J
G
Single
 150 °C.
600
8.3
60
30
N-Channel MOSFET
g
= 25 , I
C
= 25 °C, unless otherwise noted)
Power MOSFET
D
S
V
1.2
GS
AS
at 10 V
= 6.2 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
T
T
C
C
D
SiHFBC40STRL-GE3
IRFBC40STRLPbF
SiHFBC40STL-E3
IRFBC40STRL
SiHFBC40STL
= 100 °C
= 25 °C
2
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount (IRFBC40S, SiHFBC40S)
• Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)
• Available in Tape and Reel (IRFBC40S, SiHFBC40S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
the accommodating die sizes up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBC40L, SiHFBC40L) is available
for low-profile applications.
PAK (TO-263)
2
Definition
PAK is suitable for high current applications because of
2
PAK is a surface mount power package capable of
power
SYMBOL
a
a
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
a
AR
GS
DS
AS
AR
D
a
D
stg
a
capability
design,
- 55 to + 150
I
SiHFBC40L-GE3
IRFBC40LPbF
SiHFBC40L-E3
IRFBC40L
SiHFBC40L
2
and
PAK (TO-262)
LIMIT
300
± 20
600
570
130
6.2
3.9
1.0
6.2
3.1
3.0
25
13
low
Vishay Siliconix
d
the
on-resistance
lowest
www.vishay.com
UNIT
W/°C
V/ns
possible
mJ
mJ
°C
W
V
A
A
and
1

Related parts for IRFBC40SPBF

IRFBC40SPBF Summary of contents

Page 1

... PAK (TO-263) I PAK (TO-262 ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBC40S-GE3 IRFBC40SPbF Lead (Pb)-free SiHFBC40S-E3 IRFBC40S SnPb SiHFBC40S Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T PARAMETER e Drain-Source Voltage e Gate-Source Voltage Continuous Drain Current a,e Pulsed Drain Current Linear Derating Factor ...

Page 2

... IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mounted, steady-state) Maximum Junction-to-Case Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91116 S10-2433-Rev. B, 25-Oct-10 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91116 S10-2433-Rev. B, 25-Oct-10 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91116 S10-2433-Rev. B, 25-Oct- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91116 S10-2433-Rev ...

Page 7

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91116. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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