IRFZ24S Vishay, IRFZ24S Datasheet

MOSFET N-CH 60V 17A D2PAK

IRFZ24S

Manufacturer Part Number
IRFZ24S
Description
MOSFET N-CH 60V 17A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFZ24S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFZ24S
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRFZ24, SiHFZ24 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90366
S-82995-Rev. A, 12-Jan-09
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
2
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PAK
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 17 A, dI/dt ≤ 140 A/µs, V
= 25 V, starting T
(TO-262)
(Ω)
G
D
S
G
a, e
D
J
D
2
PAK (TO-263)
= 25 °C, L = 400 µH, R
S
c, e
DD
b, e
V
GS
≤ V
D
IRFZ24SPbF
SiHFZ24S-E3
IRFZ24S
SiHFZ24S
= 10 V
2
DS
PAK (TO-263)
, T
G
J
Single
≤ 175 °C.
5.8
60
25
11
N-Channel MOSFET
G
= 25 Ω, I
C
Power MOSFET
= 25 °C, unless otherwise noted
V
D
S
0.10
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
GS
AS
at 10 V
= 17 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
-
-
IRFZ24STRL
SiHFZ24STL
= 100 °C
= 25 °C
2
FEATURES
• Advanced Process Technology
• Surface Mount (IRFZ24S, SiHFZ24S)
• Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance in
any existing surface mount package. The D
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application. The through-hole version
(IRFZ24L, SiHFZ24L) is available for low-profile applications.
PAK (TO-263)
2
PAK is a surface mount power package capable of
a
a
SYMBOL
T
dV/dt
J
V
V
E
I
P
, T
I
DM
DS
GS
AS
D
D
stg
- 55 to + 175
I
-
-
IRFZ24L
SiHFZ24L
2
PAK (TO-262)
LIMIT
300
± 20
0.40
100
3.7
4.5
60
17
12
68
60
Vishay Siliconix
d
2
PAK is suitable
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
1

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IRFZ24S Summary of contents

Page 1

... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90366 S-82995-Rev. A, 12-Jan-09 IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Power MOSFET FEATURES • Advanced Process Technology 60 • Surface Mount (IRFZ24S, SiHFZ24S) 0.10 • Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) 25 • 175 °C Operating Temperature 5.8 • Fast Switching 11 • ...

Page 2

... IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mounted, Steady-State) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 90366 S-82995-Rev. A, 12-Jan-09 IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S = 25 °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 90366 S-82995-Rev. A, 12-Jan-09 ...

Page 5

... Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 90366 S-82995-Rev. A, 12-Jan-09 IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 90366 S-82995-Rev ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90366. Document Number: 90366 S-82995-Rev. A, 12-Jan-09 IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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