IRFI630G Vishay, IRFI630G Datasheet - Page 5

MOSFET N-CH 200V 5.9A TO220FP

IRFI630G

Manufacturer Part Number
IRFI630G
Description
MOSFET N-CH 200V 5.9A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRFI630G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 25V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.9 A
Power Dissipation
35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFI630G

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Document Number: 91148
S-81303-Rev. A, 16-Jun-08
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
AS
R
10 V
G
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
0.01 Ω
L
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
IRFI630G, SiHFI630G
V
DS
t
r
t
p
D.U.T.
Vishay Siliconix
R
D
t
d(off)
V
DS
t
f
V
+
-
www.vishay.com
DD
V
DD
5

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