IRFIBC30G Vishay, IRFIBC30G Datasheet
IRFIBC30G
Specifications of IRFIBC30G
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IRFIBC30G Summary of contents
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... TO-220 FULLPAK IRFIBC30GPbF SiHFIBC30G-E3 IRFIBC30G SiHFIBC30G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 2.5 A (see fig. 12 ≤ 150 °C. J IRFIBC30G, SiHFIBC30G Vishay Siliconix ( RMS device design, low on-resistance SYMBOL LIMIT V 600 DS V ± 2 1 0.28 E 250 ...
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... IRFIBC30G, SiHFIBC30G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91180 S09-0010-Rev. A, 19-Jan-09 IRFIBC30G, SiHFIBC30G = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...
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... IRFIBC30G, SiHFIBC30G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91180 S09-0010-Rev. A, 19-Jan-09 ...
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... Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91180 S09-0010-Rev. A, 19-Jan-09 IRFIBC30G, SiHFIBC30G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...
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... IRFIBC30G, SiHFIBC30G Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µ 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91180 ...
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... D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices and 3 V drive devices Fig For N-Channel IRFIBC30G, SiHFIBC30G Vishay Siliconix + + www.vishay.com 7 ...
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