IRFIBE30G Vishay, IRFIBE30G Datasheet

MOSFET N-CH 800V 2.1A TO220FP

IRFIBE30G

Manufacturer Part Number
IRFIBE30G
Description
MOSFET N-CH 800V 2.1A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRFIBE30G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.1 A
Power Dissipation
35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFIBE30G

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91184
S-81352-Rev. A, 16-Jun-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
TO-220 FULLPAK
(nC)
(nC)
(V)
≤ 4.1 A, dI/dt ≤ 100 A/µs, V
= 50 V, starting T
(Ω)
a
a
J
= 25 °C, L = 102 mH, R
G
c
D
a
S
b
DD
V
GS
≤ 600 V, T
= 10 V
G
N-Channel MOSFET
Single
800
9.6
78
45
J
≤ 150 °C.
G
D
S
= 25 Ω, I
C
Power MOSFET
= 25 °C, unless otherwise noted
V
3.0
GS
6-32 or M3 screw
at 10 V
AS
= 2.1 A (see fig. 12).
T
C
for 10 s
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFIBE30GPbF
SiHFIBE30G-E3
IRFIBE30G
SiHFIBE30G
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. The isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
SYMBOL
T
dV/dt
J
V
V
E
E
IRFIBE30G, SiHFIBE30G
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
design,
- 55 to + 150
LIMIT
300
± 20
0.28
800
240
2.1
1.4
8.4
2.1
3.5
2.0
1.1
35
10
low
RMS
d
Vishay Siliconix
(t = 60 s;
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFIBE30G Summary of contents

Page 1

... TO-220 FULLPAK IRFIBE30GPbF SiHFIBE30G-E3 IRFIBE30G SiHFIBE30G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 2.1 A (see fig. 12 ≤ 150 °C. J IRFIBE30G, SiHFIBE30G Vishay Siliconix ( RMS device design, low on-resistance SYMBOL LIMIT V 800 DS V ± 2 1.4 I 8.4 DM 0.28 E 240 ...

Page 2

... IRFIBE30G, SiHFIBE30G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91184 S-81352-Rev. A, 16-Jun-08 IRFIBE30G, SiHFIBE30G = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFIBE30G, SiHFIBE30G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91184 S-81352-Rev. A, 16-Jun-08 ...

Page 5

... Fig Unclamped Inductive Test Circuit Charge Fig. 10a - Basic Gate Charge Waveform Document Number: 91184 S-81352-Rev. A, 16-Jun- Fig Maximum Avalanche Energy vs. Drain Current IRFIBE30G, SiHFIBE30G Vishay Siliconix Fig Unclamped Inductive Waveforms Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ ...

Page 6

... IRFIBE30G, SiHFIBE30G Vishay Siliconix D.U Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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