IRFIB5N65A Vishay, IRFIB5N65A Datasheet - Page 6

• Manufacturer Part Number: IRFIB5N65A
• Description: MOSFET N-CH 650V 5.1A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB5N65A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1417pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.93 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIB5N65A

IRFIB5N65A
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
A S
10 V
12V
V
V
G
GS
R G
2 0 V
Same Type as D.U.T.
V D S
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I A S
.3 F
D .U .T
0 .0 1
L
I
G
Q
Charge
Q
V
GD
G
(B R )D SS
D.U.T.
I
D
1 5 V
+
-
V
DS
D R IV E R
+
-
V D D
A
800
600
400
200
Fig 12d. Typical Drain-to-Source Voltage
0
8 0 0
7 8 0
7 6 0
7 4 0
7 2 0
7 0 0
25
Fig 12c. Maximum Avalanche Energy
0
Starting T , Junction Temperature ( C)
50
Vs. Avalanche Current
1
I
av
Vs. Drain Current
J
, A valanche C urrent (A )
2
75
3
100
TOP
BOTTOM
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4
125
5
°
2.3A
3.3A
5.2A
I D
150
6
A