IRFIBC40GLC Vishay, IRFIBC40GLC Datasheet - Page 2

• Manufacturer Part Number: IRFIBC40GLC
• Description: MOSFET N-CH 600V 3.5A TO220FP
• Manufacturer: Vishay

Specifications of IRFIBC40GLC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIBC40GLC

IRFIBC40GLC, SiHFIBC40GLC
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
C
I
t
t
on
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
GS
GS
V
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
J
Reference to 25 °C, I
= 10 V
= 10 V
= 25 °C, I
= 480 V
V
V
V
V
V
R
f = 1.0 MHz, see fig. 5
TYP.
DS
DD
TEST CONDITIONS
DS
DS
GS
G
-
-
= 100 V, I
= 9.1 Ω
= 600 V, V
= 300 V, I
F
= V
= 0 V, I
V
V
f = 1.0 MHz
see fig. 10
= 6.2 A, dI/dt = 100 A/µs
V
GS
GS
DS
S
GS
I
GS
D
= 3.5 A, V
= ± 20 V
= 0 V, T
, I
= 25 V,
= 6.2 A, V
= 0 V,
see fig. 6 and 13
,
D
D
R
D
= 250 µA
D
= 250 µA
D
I
GS
D
= 47 Ω,
= 3.7 A
= 6.2 A,
b
= 2.1 A
D
= 0 V
J
GS
= 1 mA
= 125 °C
DS
G
G
= 0 V
b
= 360 V,
b
MAX.
D
S
b
b
D
S
3.1
65
b
MIN.
600
2.0
3.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-81275-Rev. A, 16-Jun-08
Document Number: 91181
TYP.
1100
0.70
140
440
4.5
7.5
2.1
15
12
12
20
27
17
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
S
250
660
4.0
1.2
3.5
1.5
3.2
25
39
10
19
14
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V