IRFP360 Vishay, IRFP360 Datasheet
IRFP360
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IRFP360 Summary of contents
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... C SYMBOL ° 100 ° °C C dV/ for screw = 25 Ω (see fig. 12 ≤ 150 °C. This datasheet is subject to change without notice. IRFP360, SiHFP360 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance package is preferred LIMIT UNIT V 400 ± ...
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... IRFP360, SiHFP360 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... Document Number: 90292 S11-0447-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFP360, SiHFP360 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...
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... IRFP360, SiHFP360 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90292 S11-0447-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRFP360, SiHFP360 Vishay Siliconix D.U. ...
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... IRFP360, SiHFP360 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... D • D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For N-Channel This datasheet is subject to change without notice. IRFP360, SiHFP360 Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...
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... L 0.065 0.093 L1 0.102 0.135 N 0.102 0.133 Ø P 0.015 0.034 Ø P1 0.015 0.030 Q 0.776 0.815 R 0.515 - S Package Information Vishay Siliconix A 7 ØP (Datum B) Ø Ø Thermal pad View (b1, b3, b5) Planting Base metal (c) c1 (b, b2, b4) ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...