IRFP460A Vishay, IRFP460A Datasheet

MOSFET N-CH 500V 20A TO-247AC

IRFP460A

Manufacturer Part Number
IRFP460A
Description
MOSFET N-CH 500V 20A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFP460A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
280 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP460A

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91234
S-81360-Rev. A, 28-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 20 A, dI/dt ≤ 125 A/µs, V
(Ω)
TO-247
J
= 25 °C, L = 4.3 mH, R
G
a
D
S
c
a
a
DD
b
V
GS
≤ V
G
= 10 V
= 25 Ω, I
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
105
26
42
AS
= 20 A (see fig. 12).
D
S
C
Power MOSFET
0.27
= 25 °C, unless otherwise noted
V
GS
6-32 or M3 screw
at 10 V
T
C
for 10 s
= 25 °C
T
T
C
C
TO-247
IRP460APbF
SiHFP460A-E3
IRP460A
SiHFP460A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully
• Effective C
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge
• PFC Boost
Requirement
Ruggedness
Avalanche Voltage and Current
SYMBOL
Characterized
T
dV/dt
oss
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
Specified
IRFP460A, SiHFP460A
g
Results in Simple Drive
- 55 to + 150
Capacitance
LIMIT
300
± 30
500
960
280
2.2
3.8
1.1
20
13
80
20
28
10
d
Vishay Siliconix
www.vishay.com
and
lbf · in
UNIT
W/°C
N · m
RoHS*
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
1

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IRFP460A Summary of contents

Page 1

... TO-247 IRP460APbF SiHFP460A-E3 IRP460A SiHFP460A = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 20 A (see fig. 12). AS ≤ 150 ° IRFP460A, SiHFP460A Vishay Siliconix Results in Simple Drive g Characterized Capacitance and Specified oss SYMBOL LIMIT V 500 DS V ± 2.2 E ...

Page 2

... IRFP460A, SiHFP460A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... DS , 91234_02 Fig Typical Output Characteristics Document Number: 91234 S-81360-Rev. A, 28-Jul-08 4 µs Pulse Width ° 91234_03 4 µs Pulse Width T = 150 ° 91234_04 IRFP460A, SiHFP460A Vishay Siliconix 2 10 ° 150 C 10 ° µs Pulse Width 0.1 4.0 5.0 6.0 7.0 8.0 V Gate-to-Source Voltage ( Fig ...

Page 4

... IRFP460A, SiHFP460A Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91234_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 250 100 Total Gate Charge (nC) 91234_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91234_07 Fig Typical Source-Drain Diode Forward Voltage V = 400 V ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91234 S-81360-Rev. A, 28-Jul-08 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( Driver + - IRFP460A, SiHFP460A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFP460A, SiHFP460A Vishay Siliconix 2400 2000 1600 1200 800 400 100 Starting T , Junction Temperature (°C) 91234_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 620 I D Top 8 Bottom 20 A 600 580 560 540 125 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFP460A, SiHFP460A Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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