RDR005N25TL Rohm Semiconductor, RDR005N25TL Datasheet

RDR005N25TL

Manufacturer Part Number

RDR005N25TL

Description

MOSFET N-CH 250V 500MA SOT-346T

Manufacturer

Rohm Semiconductor

Datasheet

1.RDR005N25TL.pdf (1 pages)

Specifications of RDR005N25TL

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

500mA

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-346

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

250 V

Continuous Drain Current

0.5 A

Power Dissipation

1 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Vgs(th) (max) @ Id

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

RDR005N25TLTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

RDR005N25TL

Manufacturer:

ROHM/罗姆

Quantity:

20 000

Company:

H&T Electronics

Part Number:

RDR005N25TL

Quantity:

1 184

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RDR005N25 | MOSFETs | Transistors | Discrete Semiconductors | ROHM CO., LTD.

http://www.rohm.com/products/discrete/transistor/mosfet/rdr005n25/

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Terms & Conditions

[ Product description ]

Power MOSFETs are made as low ON-resistance devices by the micro-

processing technologies useful for wide range of applications.Broad lineup

covering compact types, high-power types and complex types to meet various

needs in the market.

• 4V-drive type Nch Middle-power MOSFET

*1 Active: Production or current type Preparation: Preliminary type Preview: Development type

*2 Display ranks are representative hFE rank.Please understand that selection of hFE rank is not possible.

Drain-Source voltage V

Gate-Source voltage V

Drain current(continuous) I

(A)

Source current(body Di) I

Total power dissipation P

Channel temperature Tch(ºC)

Storage temperature Tstg(ºC)

RDR005N25TL

4V Drive Nch MOSFET

RDR005N25

Please check the details on

Features

Product specifications

Status Product

Others

Data Sheet

Rated parameters

Part No.

Reliability information

Absolute maximum ratings (Ta=25ºC)

GSS

DSS

TSMT3

(A)

(W)

(V)

Package

(V)

"Product List"

Standard

-55 to +150

value

Status

Active

for Others.

±0.5

250

±20

150

0.5

Operation notes

Mounted on a ceramic

board

RoHS

Yes

Conditions

Packing

*The contents described here are just outline for introduction.

Please obtain the specification sheets from us for thorough check before use.

taping

style

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Design Model

Package

quantity

3000

Condition of soldering

Outline

TSMT3

Dimensions

* Click to enlarge.

Equivalent circuit diagram

Samples

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Operation notes

Pant No. explanation

Package

Taping specifications

Soldering conditions

Storage conditions

Explanation of symbols

FAQ

ROHM Internet Direct

RoHS directive compliance

Transistors

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