ATP301-TL-H SANYO, ATP301-TL-H Datasheet

MOSFET P-CH 100V 28A ATPAK

ATP301-TL-H

Manufacturer Part Number
ATP301-TL-H
Description
MOSFET P-CH 100V 28A ATPAK
Manufacturer
SANYO
Datasheet

Specifications of ATP301-TL-H

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
28A
Gate Charge (qg) @ Vgs
73nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 20V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
ATPAK (2 leads+tab)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
57mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
20V
Transistor Case Style
ATPAK
No. Of Pins
3
Current Id
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
869-1086-2
Ordering number : ENA1457
ATP301
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : ATP301
Note : *1 V DD =--30V, L=100 μ H, I AV =- -28A
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Avalanche resistance guarantee.
10V drive.
Halogen free compliance.
*2 L ≤ 100 μ H, Single pulse
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer ' s
products or equipment.
Parameter
Parameter
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V DSS
V (BR)DSS
I DSS
I GSS
V GS (off)
V GSS
I D
I DP
P D
Tch
Tstg
E AS
I AV
Symbol
Symbol
www.semiconductor-sanyo.com/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
Tc=25°C
I D =- -1mA, V GS =0V
V DS =- -100V, V GS =0V
V GS =±16V, V DS =0V
V DS =- -10V, I D =- -1mA
ATP301
Conditions
Conditions
42209QA MS IM TC-00001941
DATA SHEET
min
--100
--2.0
Ratings
typ
Ratings
Continued on next page.
--55 to +150
max
--100
--112
--3.5
±20
--28
--28
±10
150
70
- -1
54
No. A1457-1/4
Unit
Unit
mJ
μA
μA
°C
°C
W
A
A
A
V
V
V
V

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ATP301-TL-H Summary of contents

Page 1

... Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Marking : ATP301 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...

Page 2

... Qgd V DS =--60V =--10V =--28A =--28A =0V 1.5 4.6 2.6 0.4 0 Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK Avalanche Resistance Test Circuit V OUT 0V --10V Ratings Unit min typ max mΩ 4000 pF 270 pF 150 130 ns 330 ns 190 --1.0 --1 ≥50Ω RG ATP301 V DD 50Ω No. A1457-2/4 ...

Page 3

... Drain Current Time -- I D 1000 100 (on --0.1 --1.0 Drain Current ATP301 -- --10V --50 --40 --30 --20 --10 0 --4.5 --5.0 0 IT14592 160 Single pulse --14A 140 120 100 ° C --25 ° --8 --9 --10 --50 IT14594 --100 --10V Single pulse 2 -- --1 --0.1 ...

Page 4

... Case Temperature °C Note on usage : Since the ATP301 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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