R6015ANX Rohm Semiconductor, R6015ANX Datasheet
R6015ANX
Specifications of R6015ANX
Related parts for R6015ANX
R6015ANX Summary of contents
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... ∗1 ± ∗ ∗ ∗ ∗ °C 150 Tch −55 to +150 °C Tstg R6015ANX φ 3.2 10.0 4.5 2.8 1.2 1.3 0.8 2.54 2.54 0.75 2.6 (1) (2) (3) ∗1 (1) (2) (3) (1) Gate (2) Drain ∗1 Body Diode (3) Source 1/5 ...
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... ∗ − − ∗ − − Min. Typ. Max. Unit ∗ − − 1 15A R6015ANX Unit °C/W Conditions =±30V =1mA =600V =10V, I =1mA =7.5A, V =10V =7.5A, V =10V =25V f=1MHz =7.5A 300V ...
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... Fig.5 Gate Threshold Voltage vs. Channel Temperature 0 10V GS Pulsed 0.5 0 15A D 0 7.5A 0.2 D 0 100 150 CHANNEL TEMPERATURE: T (°C) ch Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature R6015ANX 20 Ta= 25°C Pulsed 10V 15 8.0V 7.0V 5.5V 6.5V 10 6. DRAIN-SOURCE VOLTAGE: V (V) DS Fig.3: Typical Output Characteristics ...
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... Drain-Source Voltage 10000 Ta= 25° 300V 10V GS 1000 Pulsed t d(off) 100 10 t d(on 0.01 0 DRAIN CURRENT : I (A) D Fig.14 Switching Characteristics 1 10 100 1000 R6015ANX 15 Ta= 25° 300V 12A Pulsed 5 0 1000 TOTAL GATE CHARGE : Q g Fig.12 Dynamic Input Characteristics 100 40 50 (nC) 4/5 ...
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... Transistors Switching characteristics measurement circuit Fig.1-1 Switching Time Measurement Circuit I (Const.) G Fig.2-1 Gate Charge Measurement Circuit Fig.3-1 Avalanche Measurement Circuit R6015ANX Fig.1-2 Switching Waveforms Fig.2-2 Gate Charge Waveform Fig.3-2 Avalanche Waveform 5/5 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...