IRLML5103TRPBF International Rectifier, IRLML5103TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML5103TRPBF
• Description: MOSFET P-CH 30V 760MA SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLML5103TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 760mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 75pF @ 25V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Channel Type: P
• Current, Drain: -0.76 A
• Gate Charge, Total: 3.4 nC
• Package Type: Micro3
• Polarization: P-Channel
• Power Dissipation: 540 mW
• Resistance, Drain To Source On: 0.6 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 16 ns
• Time, Turn-on Delay: 8.2 ns
• Transconductance, Forward: 0.44 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.6Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 760mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1000 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 0.61 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 3.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML5103PBFTR

0.1
10
140
120
100
1
80
60
40
20
0.4
0
1
T = 150°C
C
C
C
J
-V
0.6
-V
iss
oss
rss
SD
DS
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.8
= 0V,
= C
= C
= C
gs
gd
ds
T = 25°C
1.0
J
+ C
+ C
10
gd
gd
f = 1MHz
, C
1.2
ds
SHORTED
V
1.4
GS
= 0V
1.6
100
A
A
0.1
20
16
12
10
1
8
4
0
0.0
1
T
T
Single Pulse
I
D
A
J
= -0.60A
= 25°C
= 150°C
-V
OPERATION IN THIS AREA LIMITED
1.0
DS
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
2.0
V
V
BY R
DS
DS
10
= -24V
= -15V
DS(on)
FOR TEST CIRCUIT
3.0
SEE FIGURE 9
100µs
1ms
10ms
4.0
100
5.0
A
A