SI3443DVTRPBF International Rectifier, SI3443DVTRPBF Datasheet

SI3443DVTRPBF

Manufacturer Part Number

SI3443DVTRPBF

Description

MOSFET P-CH 20V 4.4A 6-TSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.SI3443DVTRPBF.pdf (7 pages)

Specifications of SI3443DVTRPBF

Package / Case

Micro6™(TSOP-6)

Mounting Type

Surface Mount

Power - Max

Fet Type

MOSFET P-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

15nC @ 4.5V

Vgs(th) (max) @ Id

1.2V @ 250µA

Current - Continuous Drain (id) @ 25° C

4.4A

Drain To Source Voltage (vdss)

20V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

65 mOhm @ 4.4A, 4.5V

Configuration

Single Quad Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

65 mOhms

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

- 4.4 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

72 ns

Gate Charge Qg

11 nC

Minimum Operating Temperature

- 55 C

Rise Time

33 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

SI3443DVTRPBF

Manufacturer:

Quantity:

8 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI3443DVTRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SI3443DVTRPBF

Quantity:

1 055

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Thermal Resistance

Description

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The TSOP-6 package with its customized leadframe

produces a HEXFET

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

premium. It's unique thermal design and R

enables a current-handling increase of nearly 300%

compared to the SOT-23.

www.irf.com

@ T

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

-2.5V Rated

STG

= 70°C

= 25°C

= 70°C

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy„

Gate-to-Source Voltage

Junction and Storage Temperature Range

power MOSFET with R

Parameter

DS(on)

@ -4.5V

reduction

60%

Top View

HEXFET

-55 to + 150

Max.

0.016

62.5

TSOP-6

-4.4

-3.5

± 12

-20

2.0

1.3

Si3443DV

DS(on)

Power MOSFET

DSS

= 0.065

= -20V

PD- 93795B

Units

W/°C

°C/W

°C

01/13/03

Related parts for SI3443DVTRPBF

SI3443DVTRPBF Summary of contents

Page 1

... Available in Tape & Reel -2.5V Rated l Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ...

Page 2

Si3443DV Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V 10 1 -1.50V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...

Page 4

Si3443DV 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

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Page 7

TSOP-6 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/03 Si3443DV 7 ...

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