IRFL014NPBF International Rectifier, IRFL014NPBF Datasheet

IRFL014NPBF

Manufacturer Part Number

IRFL014NPBF

Description

MOSFET N-CH 55V 1.9A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFL014NTRPBF.pdf (8 pages)

2.IRFL014NPBF.pdf (4 pages)

Specifications of IRFL014NPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

160 mOhm @ 1.9A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

1.9A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

11nC @ 10V

Input Capacitance (ciss) @ Vds

190pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Current, Drain

1.9 A

Gate Charge, Total

7 nC

Package Type

SOT-223

Polarization

N-Channel

Power Dissipation

2.1 W

Resistance, Drain To Source On

0.16 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

12 ns

Time, Turn-on Delay

6.6 ns

Transconductance, Forward

1.6 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1 V

Voltage, Gate To Source

±20 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Fifth Generation HEXFET

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

θJA

@ T

Surface Mount

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

Lead-Free

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

MOSFETs from International

power MOSFETs are well

Parameter

@ 10V**

@ 10V*

Typ.

IRFL014NPbF

HEXFET

-55 to + 150

Max.

1.7

SOT-223

± 20

2.7

1.9

1.5

2.1

1.0

8.3

0.1

5.0

Max.

Power MOSFET

120

DS(on)

DSS

= 1.9A

= 0.16Ω

= 55V

mW/°C

Units

V/ns

°C

06/07/04

Related parts for IRFL014NPBF

IRFL014NPBF Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Amb. (PCB Mount, steady state)* θJA R Junction-to-Amb. (PCB Mount, steady state)** θJA * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com IRFL014NPbF HEXFET 10V 10V 10V 150 Typ ...

Page 2

... IRFL014NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... Fig 3. Typical Transfer Characteristics www.irf.com 100 TOP BOTTOM 4. 0.1 0.1 10 100 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = 25V 0 -60 Fig 4. Normalized On-Resistance IRFL014NPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( 1. 10V GS -40 - ...

Page 4

... IRFL014NPbF 350 1MHz iss 300 rss oss iss 250 C oss 200 150 C 100 rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150° 25° 0.1 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 ...

Page 5

... RESPONSE) 0.1 0.00001 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit d(on) Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRFL014NPbF + - ≤ 1 ≤ 0 d(off Notes: 1. Duty factor Peak thJA ...

Page 6

... IRFL014NPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms 6 120 15V 100 DRIVER (BR)DSS Starting T , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy I TOP 1.5A 2.7A BOTTOM 3.4A = 25V 50 75 100 125 J Vs. Drain Current www ...

Page 7

... HEXFET PRODUCT MARKING T HIS IS AN IRFL014 INT ERNAT IONAL FL014 RECT IFIER LOGO T OP www.irf.com PART NUMBER 314P EMBLY S ITE DAT E CODE CODE (YYWW YEAR WW = WEEK P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) IRFL014NPbF LOT CODE AXXXX BOT ...

Page 8

... IRFL014NPbF 2.05 (.080) 1.95 (.077) TR FEED DIRECTION 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 330.00 (13.000) MAX. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. ...

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