IRLL024NPBF International Rectifier, IRLL024NPBF Datasheet

IRLL024NPBF

Manufacturer Part Number

IRLL024NPBF

Description

MOSFET N-CH 55V 3.1A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRLL024NTRPBF.pdf (8 pages)

2.IRLL024NTRPBF.pdf (4 pages)

Specifications of IRLL024NPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

65 mOhm @ 3.1A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

3.1A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

15.6nC @ 5V

Input Capacitance (ciss) @ Vds

510pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Current, Drain

4.4 A

Gate Charge, Total

10.4 nC

Package Type

SOT-223

Polarization

N-Channel

Power Dissipation

2.1 W

Resistance, Drain To Source On

0.065 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

18 ns

Time, Turn-on Delay

7.4 ns

Transconductance, Forward

3.3 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1 V

Voltage, Gate To Source

±16 V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.065Ohm

Drain-source On-volt

55V

Gate-source Voltage (max)

±16V

Continuous Drain Current

4.4A

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRLL024NPBF

Manufacturer:

Quantity:

1 000

Current page: 1 of 8
Download datasheet (146Kb)

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

dv/dt

θJA

@ T

Surface Mount

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

Lead-Free

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

Typ.

IRLL024NPbF

HEXFET

-55 to + 150

S O T -2 2 3

Max.

± 16

120

4.4

3.1

2.5

2.1

1.0

8.3

5.0

3.1

0.1

Max.

DS(on)

Power MOSFET

120

DSS

= 3.1A

= 0.065Ω

= 55V

PD - 95221

Units

mW/°C

Units

°C/W

V/ns

°C

04/27/04

Related parts for IRLL024NPBF

IRLL024NPBF Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Amb. (PCB Mount, steady state)* θJA R Junction-to-Amb. (PCB Mount, steady state)** θJA * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com IRLL024NPbF HEXFET 10V 10V 10V 150 Typ ...

Page 2

... IRLL024NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP BOTTOM 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 2 1.5 ° 1.0 0.5 = 25V 0 -60 -40 -20 Fig 4. Normalized On-Resistance IRLL024NPbF VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 2.7V 2.7V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( 10V ...

Page 4

... IRLL024NPbF 1000 1MHz iss rss 800 oss 600 C iss 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 ° 0.1 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 15 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com R G Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRLL024NPbF D.U. 5. d(off ...

Page 6

... IRLL024NPbF 0.0 1 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 300 250 1 5V 200 150 + 100 Starting T , Junction Temperature ( Fig 12c. Maximum Avalanche Energy 12V V GS Fig 13b. Gate Charge Test Circuit ...

Page 7

... SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information PRODUCT MARKING T HIS IS AN IRF L 014 INT E RNAT IONAL OGO www.irf.com PAR T NUMB L014 314P DAT E CODE (YYWW IGNAT AD PRODUCT (OPT IONAL) IRLL024NPbF L OT CODE AXXXX CODE ...

Page 8

... IRLL024NPbF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches (. (. (. (. & (. (. 330.00 (13.000 LIN WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 (. (. (. (. (. (. (. (. (. (. (. (. .40 (. . Data and specifications subject to change without notice. Visit us at www.irf.com for sales contact information. 04/04 0 ...

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