IRF8721PBF International Rectifier, IRF8721PBF Datasheet

MOSFET N-CH 30V 14A 8-SOIC

IRF8721PBF

Manufacturer Part Number
IRF8721PBF
Description
MOSFET N-CH 30V 14A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF8721PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
1040pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
14 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
8.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF8721PBF
Manufacturer:
HARRIS
Quantity:
10
Part Number:
IRF8721PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF8721PBF
Quantity:
25 780
Applications
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Description
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Benefits
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www.irf.com
Notes  through
Absolute Maximum Ratings
V
V
I
I
I
P
P
T
T
Thermal Resistance
R
R
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
Converters used for Notebook Processor
@ T
@ T
and Current
Control MOSFET of Sync-Buck
Control MOSFET for Isolated DC-DC
Power
Very Low Gate Charge
Low R
Low Gate Impedance
Fully Characterized Avalanche Voltage
20V V
Lead-Free
@T
@T
Converters in Networking Systems
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
DS(on)
Max. Gate Rating
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
at 4.5V V
are on page 9
GS
Parameter
Parameter
fg
g
GS
GS
@ 10V
@ 10V
V
G
S
S
S
30V 8.5m : @V
DSS
1
2
3
4
Top View
Typ.
–––
–––
R
-55 to + 150
HEXFET
8
7
6
5
IRF8721PbF
DS(on)
Max.
0.02
± 20
110
2.5
1.6
30
14
11
D
D
D
D
A
A
GS
Max.
max
®
20
50
Power MOSFET
= 10V 8.3nC
SO-8
Units
Units
W/°C
°C/W
Qg
°C
W
07/30/07
V
A
1

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IRF8721PBF Summary of contents

Page 1

... Description The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc- tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH 2. 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 15V ≤ 60μs PULSE WIDTH 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 1000 Ciss Coss Crss 100 1 ...

Page 5

Ambient Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 10 0.20 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ...

Page 6

125° 25°C 6 2.0 4.0 6 Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V D.U 20V 0.01 ...

Page 7

Current Regulator Same Type as D.U.T. 50KΩ .2μF 12V .3μF D.U. 3mA I G Current Sampling Resistors Fig 16a. Gate Charge Test Circuit D.U.T + ƒ • • - • + ‚ -  • • • SD ...

Page 8

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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