IRFL4315TRPBF International Rectifier, IRFL4315TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFL4315TRPBF
• Description: MOSFET N-CH 150V 2.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL4315TRPBF

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 2.8W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Vgs(th) (max) @ Id: 5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 2.8 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFL4315
10000
4
1000
100
10
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage

T = 150
J
V
V DS , Drain-to-Source Voltage (V)
SD
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
,Source-to-Drain Voltage (V)
Forward Voltage
°
C
10
1.0
C rss

C oss
T = 25
C iss
f = 1 MHZ
J
1.5
°
C
100

V
2.0
GS
= 0 V
1000
2.5
12
10
100
0.1
8
6
4
2
0
10
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
1
I D = 1.6A
Tc = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
2
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
4
V DS = 120V
V DS = 75V
V DS = 30V
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
6
8
FOR TEST CIRCUIT
SEE FIGURE 13
100
www.irf.com
10
100µsec
1msec
10msec
12
1000
14