IRLR7821TRPBF International Rectifier, IRLR7821TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRLR7821TRPBF
• Description: MOSFET N-CH 30V 65A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR7821TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1030pF @ 15V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 65A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLR7821PBFTR

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D.U.T
Fig 15.
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SD
•
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Vgs(th)
Qgs1 Qgs2
Vds
-
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Fig 16. Gate Charge Waveform
HEXFET
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V
®
Qgd
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Qgodr
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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