IRLR8259PBF International Rectifier, IRLR8259PBF Datasheet - Page 5

• Manufacturer Part Number: IRLR8259PBF
• Description: MOSFET N-CH 25V 57A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR8259PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 13V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 57A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 6.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.9V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 12.9 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 57 A
• Power Dissipation: 48 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.8 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
60
50
40
30
20
10
0.1
0
10
1E-006
Fig 9. Maximum Drain Current vs.
1
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
Case Temperature
0.01
0.02
0.20
0.10
0.05
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
Limited By Package
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
Fig 10. Threshold Voltage vs. Temperature
1
Ci
2.5
2.0
1.5
1.0
0.5
i/Ri
R
1
R
-75 -50 -25
1
0.001
τ
2
τ
R
2
2
R
2
R
τ
3
3
R
τ
3
T J , Temperature ( °C )
3
I D = 25µA
0
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
R
4
τ
4
25 50 75 100 125 150 175
R
4
4
τ
C
τ
Ri (°C/W) τi (sec)
0.01
0.08148
0.88089
1.48814
0.69949
0.000017
0.000107
0.001018
0.006290
5
0.1