IRLR120NPBF International Rectifier, IRLR120NPBF Datasheet - Page 3

• Manufacturer Part Number: IRLR120NPBF
• Description: MOSFET N-CH 100V 10A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR120NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 185 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 265 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 22 ns
• Gate Charge Qg: 13.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
100
0.1
0.1
10
10
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1
0.1
2
TOP
BOTTOM 2.5V
V
V
GS
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
1
6
T = 175°C
2.5V
J
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
= 50V
10
8
100
10
A
A
100
0.1
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
TOP
BOTTOM 2.5V
I
D
= 10A
V
T , Junction Temperature (°C)
DS
J
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
Vs. Temperature
IRLR/U120NPbF
, Drain-to-Source Voltage (V)
0
1
20
40
60
20µs PULSE WIDTH
T = 175°C
80 100 120 140 160 180
J
2.5V
10
V
GS
= 10V
3
100
A
A