IRFR13N20DTRLP International Rectifier, IRFR13N20DTRLP Datasheet - Page 2

• Manufacturer Part Number: IRFR13N20DTRLP
• Description: MOSFET N-CH 200V 13A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR13N20DTRLP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 830pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 235 mOhms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 11 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
www.irf.com