IRFR3411TRPBF International Rectifier, IRFR3411TRPBF Datasheet

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Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ...

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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

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1MHz iss rss gd 2500 oss iss 2000 1500 1000 C oss 500 ...

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T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 ...

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D.U 20V 0.01 Ω Charge 6 400 15V DRIVER 300 + 200 A 100 V ...

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D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

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EXAMPLE: THIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN THE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" ssembly line position indicates "Lead-Free" qualification ...

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EXAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 2001 IN THE ASS EMB LY LINE "A" Note: "P" in ass embly line pos ition indicates Lead-Free" OR Notes: 1. ...

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NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO ...