IRF3704SPBF International Rectifier, IRF3704SPBF Datasheet - Page 6

• Manufacturer Part Number: IRF3704SPBF
• Description: MOSFET N-CH 20V 77A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3704SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1996pF @ 10V
• Power - Max: 87W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 64 A
• Power Dissipation: 90 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3704SPBF

IRF3704/S/LPbF
I
Fig 15a&b. Unclamped Inductive Test circuit
AS
12V
Fig 14a&b. Basic Gate Charge Test circuit
V
6
GS
0.020
0.015
0.010
0.005
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
50KΩ
3mA
t p
Current Sampling Resistors
0
.3µF
I
G
V
(BR)DSS
50
D.U.T.
and Waveforms
and Waveforms
I
D
I D , Drain Current ( A )
+
-
V
DS
100
V
R G
GS
VGS = 4.5V
20V
V DS
150
V
t p
G
VGS = 10V
Q
I AS
GS
D.U.T
0.01 Ω
200
L
Q
Charge
Q
GD
G
250
15V
DRIVER
300
+
- V DD
A
0.010
0.009
0.008
0.007
0.006
Fig 13. On-Resistance Vs. Gate Voltage
600
500
400
300
200
100
0
Fig 15c. Maximum Avalanche Energy
4.0
25
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
5.0
50
Vs. Drain Current
J
75
6.0
100
7.0
I D = 35.5A
125
TOP
BOTTOM
8.0
www.irf.com
150
9.0
11.6A
23.8A
28.4A
°
I D
175
10.0