IRLR3110ZTRPBF International Rectifier, IRLR3110ZTRPBF Datasheet
IRLR3110ZTRPBF
Specifications of IRLR3110ZTRPBF
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IRLR3110ZTRPBF Summary of contents
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Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial applications, ® this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...
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PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 25° 25V 60µs ...
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0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...
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Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 ...
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D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...
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Duty Cycle = Single Pulse 0.01 10 0.05 0.10 Allowed avalanche Current vs avalanche 1 pulsewidth, tav, assuming Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 150 TOP Single Pulse BOTTOM 1% Duty Cycle 125 ...
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D.U.T + - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery ...
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TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...