IRLR3915PBF International Rectifier, IRLR3915PBF Datasheet

MOSFET N-CH 55V 30A DPAK

IRLR3915PBF

Manufacturer Part Number
IRLR3915PBF
Description
MOSFET N-CH 55V 30A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR3915PBF.pdf (11 pages)

Specifications of IRLR3915PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
92nC @ 10V
Input Capacitance (ciss) @ Vds
1870pF @ 25V
Power - Max
120W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
61 A
Power Dissipation
120 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
100 ns
Gate Charge Qg
61 nC
Minimum Operating Temperature
- 55 C
Rise Time
51 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLR3915PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRLR3915PBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this product are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Thermal Resistance
Features
Absolute Maximum Ratings
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
@ T
@ T
@ T
JC
JA
JA
Lead-Free
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
@T
(6 sigma)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB
Junction-to-Ambient–––
Parameter
Parameter
mount)ˆ
GS
GS
GS
@ 10V (Silicon limited)
@ 10V (See Fig.9)
@ 10V (Package limited)
G
Typ.
–––
–––
110
HEXFET
IRLR3915PbF
See Fig.12a, 12b, 15, 16
300 (1.6mm from case )
D
S
IRLR3915PbF
IRLU3915PbF
Max.
D-Pak
-55 to + 175
0.77
240
120
± 16
200
600
®
61
43
30
R
Power MOSFET
DS(on)
Max.
V
1.3
50
DSS
I
IRLU3915PbF
D
= 30A
PD - 95090B
= 14m
I-Pak
= 55V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRLR3915PBF Summary of contents

Page 1

... JA R Junction-to-Ambient––– JA HEXFET( registered trademark of International Rectifier. www.irf.com IRLR3915PbF IRLU3915PbF HEXFET IRLR3915PbF @ 10V (Silicon limited 10V (See Fig. 10V (Package limited) GS See Fig.12a, 12b, 15, 16 300 (1.6mm from case ) Typ. ––– mount)ˆ ––– ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000. 25°C 100.00 10.00 1. ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 1000 100 ...

Page 5

LIMITED BY PACKAGE 100 125 ° Case Temperature ( C) C Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.05 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current vs.Pulsewidth 220 TOP Single Pulse 200 BOTTOM 10% Duty Cycle 30A 180 160 140 120 100 80 ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V 90% 10% V Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - ...

Page 9

EXAMPLE: T HIS IS AN IRFR120 WIT H AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position indicates ...

Page 10

E XAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 2001 SEMBLY LINE "A" Note: "P" embly line pos ition indicates Lead-Free" OR ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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