IRLU7821PBF International Rectifier, IRLU7821PBF Datasheet - Page 6

• Manufacturer Part Number: IRLU7821PBF
• Description: MOSFET N-CH 30V 65A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU7821PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1030pF @ 15V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 75 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU7821PBF

Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13. Gate Charge Test Circuit
I
AS
12V
V
GS
R G
20V
Same Type as D.U.T.
V
V DS
GS
Current Regulator
.2µF
t p
50KΩ
3mA
I AS
Current Sampling Resistors
D.U.T
t p
.3µF
0.01 Ω
L
I
G
D.U.T.
15V
I
V
D
(BR)DSS
DRIVER
+
-
V
+
-
DS
V DD
A
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
1000
800
600
400
200
V
90%
10%
V
DS
GS
0
Fig 12c. Maximum Avalanche Energy
25
Starting Tj, Junction Temperature
t
R
d(on)
50
V
V
Vs. Drain Current
t
r
V
≤ 0.1 %
75
≤ 1
100
D.U.T.
t
d(off)
R
TOP
BOTTOM
125
www.irf.com
( C)
t
f
°
150
4.9A
8.5A
12A
+
-
I D
V
175