IRF6710S2TRPBF International Rectifier, IRF6710S2TRPBF Datasheet - Page 4

MOSFET N-CH 25V 12A DIRECTFET

IRF6710S2TRPBF

Manufacturer Part Number
IRF6710S2TRPBF
Description
MOSFET N-CH 25V 12A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6710S2TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.9 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1190pF @ 13V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric S1
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.9 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
37 A
Power Dissipation
15 W
Gate Charge Qg
8.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6710S2TRPBF
Quantity:
695
Part Number:
IRF6710S2TRPBF
Manufacturer:
IR
Quantity:
8 000
Part Number:
IRF6710S2TRPBF
Manufacturer:
IR
Quantity:
20 000
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
10000
1000
1000
1000
0.01
0.01
100
100
100
0.1
0.1
10
10
Fig 6. Typical Transfer Characteristics
1
1
0.1
Fig 4. Typical Output Characteristics
1.5
1
T J = 175°C
T J = 25°C
T J = -40°C
2.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.5V
2.5
1
C oss
C rss
C iss
3.0
f = 1 MHZ
≤60µs PULSE WIDTH
Tj = 25°C
10
V DS = 15V
≤60µs PULSE WIDTH
3.5
10
TOP
BOTTOM
4.0
4.5
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
100
5.0
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
2.0
1.5
1.0
0.5
30
25
20
15
10
10
5
0
1
-60 -40 -20 0 20 40 60 80 100120140160180
0.1
0
Fig 5. Typical Output Characteristics
Fig 9. Typical On-Resistance vs.
T J = 25°C
I D = 12A
Drain Current and Gate Voltage
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
20
I D , Drain Current (A)
2.5V
1
40
V GS = 10V
VGS = 4.5V
≤60µs PULSE WIDTH
Tj = 175°C
60
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
10
TOP
BOTTOM
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80
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
100

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