IRFZ44NSTRRPBF International Rectifier, IRFZ44NSTRRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFZ44NSTRRPBF
• Description: MOSFET N-CH 55V 49A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ44NSTRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1470pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17.5 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 45 ns
• Gate Charge Qg: 42 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 60 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
100
100
10
10
1
1
0.1
4
TOP
BOTTOM 4.5V
V
V
5
GS
15V
DS
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
6
T = 25°C
J
4.5V
7
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
C
T = 175°C
J
= 25V
10
8
9
100
10
A
A
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
TOP
BOTTOM 4.5V
I
D
= 41A
V
T , Junction Temperature (°C)
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
J
, Drain-to-Source Voltage (V)
0
1
20
40
60
4.5V
20µs PULSE WIDTH
T = 175°C
80 100 120 140 160 180
C
10
V
GS
= 10V
3
100
A
A